In a paper presented at the International Solid-State Circuits Conference here Tuesday, Intel said that it has used a “write-verify-write” scheme and a two-stage current sensing technique to create 7-Mb perpendicular STT-MRAM arrays in its 22FFL FinFET process. The company had provided early details of its success in developing the first FinFET-based MRAM devices last year at the International Electron Devices Meeting.

 

The embedded MRAM technology achieves 10-year retention at 200°C and endurance of more than 106 switching cycles, said Ligiong Wei, an Intel engineer who presented the paper Tuesday. The arrays have demonstrated write endurance of more than 1E06 cycles and read disturb error rate of more than 1E12 cycles, Wei said.

 

In addition to high endurance, the 22-nm embedded MRAM technology boasts robust yields, with a bit yield rate of greater than 99.9%, according to Wei. However, manufacturing the devices requires error-correction code bits, increasing the size and power budget of the design, Wei said.

 

Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-Torque MRAM (ST-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount.  With over 70 Million MRAM and ST-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world.